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參數(shù)資料
| 型號： | HGTG11N120CND |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 43 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 81K |
| 代理商： | HGTG11N120CND |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 11A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 2mH
Test Circuit (Figure 18)
-
23
26
ns
Current Rise Time
t
rI
-
12
16
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
180
240
ns
Current Fall Time
t
fI
-
190
230
ns
Turn-On Energy (Note 4)
E
ON1
-
0.4
0.5
mJ
Turn-On Energy (Note 4)
E
ON2
-
0.95
1.3
mJ
Turn-Off Energy (Note 5)
E
OFF
-
1.3
1.6
mJ
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 11A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 2mH
Test Circuit (Figure 18)
-
21
24
ns
Current Rise Time
t
rI
-
12
16
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
210
280
ns
Current Fall Time
t
fI
-
340
400
ns
Turn-On Energy (Note 4)
E
ON1
-
0.45
0.6
mJ
Turn-On Energy (Note 4)
E
ON2
-
1.9
2.5
mJ
Turn-Off Energy (Note 5)
E
OFF
-
2.1
2.5
mJ
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.42
o
C/W
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
40
10
25
75
100
125
150
30
35
25
15
5
V
GE
= 15V
20
45
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
40
0
I
C
,
10
20
600
800
400
200
1000
1200
0
50
60
30
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 400
μ
H
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG11N120CND | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT |
| HGTG12N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG12N60A4S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-247AA |
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