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參數(shù)資料
| 型號： | HGTG10N120BN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 35A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 217K |
| 代理商： | HGTG10N120BN |
2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
=
10A
V
CE
= 960V
V
GE
= 15V
R
G
= 10
L = 2mH
Test Circuit (Figure 18)
-
23
26
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
165
210
ns
Current Fall Time
t
fI
-
100
140
ns
Turn-On Energy (Note 5)
E
ON1
-
0.32
0.4
mJ
Turn-On Energy (Note 5)
E
ON2
-
0.85
1.1
mJ
Turn-Off Energy (Note 4)
E
OFF
-
0.8
1.0
mJ
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 10A
V
CE
= 960V
V
GE
= 15V
R
G
= 10
L = 2mH
Test Circuit (Figure 18)
-
21
25
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
190
250
ns
Current Fall Time
t
fI
-
140
200
ns
Turn-On Energy (Note 5)
E
ON1
-
0.4
0.5
mJ
Turn-On Energy (Note 5)
E
ON2
-
1.75
2.3
mJ
Turn-Off Energy (Note 4)
E
OFF
-
1.1
1.4
mJ
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.42
o
C/W
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
10
25
75
100
125
150
25
30
15
5
V
GE
= 15V
20
35
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
40
0
I
C
,
10
20
600
800
400
200
1000
1200
0
50
60
30
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 400
μ
H
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
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| HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG10N120BND | 功能描述:IGBT 晶體管 35A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG10N120BND | 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 1.2KV 35A |
| HGTG10N120BND_Q | 功能描述:IGBT 晶體管 35A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG10N120ND | 制造商:Rochester Electronics LLC 功能描述: |
| HGTG11N120CN | 功能描述:IGBT 晶體管 43A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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