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參數(shù)資料
| 型號： | HGTD7N60C3S |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs(14A, 600V, UFS系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 144K |
| 代理商： | HGTD7N60C3S |
5
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
E
O
,
μ
J
100
500
1000
2000
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
500
1000
3000
100
V
GE
= 10V or 15V
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
2
10
20
30
10
100
200
1
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 50
, L = 1mH
V
GE
= 15V
V
GE
= 10V
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 2.1
o
C/W
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
10
20
30
40
T
J
= 150
o
C, V
GE
= 15V, R
G
= 50
, L = 1mH
50
C
OES
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
1000
1200
C
C
IES
FREQUENCY = 1MHz
800
600
400
200
V
G
,
V
C
,
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 1.044mA, R
L
= 50
, T
C
= 25
o
C
0
300
200
400
500
600
15
12.5
10
7.5
5
0
V
CE
= 400V
V
CE
= 200V
5
10
15
20
25
30
0
100
2.5
V
CE
= 600V
HGTD7N60C3S, HGTP7N60C3
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| HGTD7N60C3 | 14A, 600V, UFS Series N-Channel IGBTs |
| HGTD7N60C3S | 14A, 600V, UFS Series N-Channel IGBTs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD7N60C3S9A | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD8P50G1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD8P50G1S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTD8P50GIS | 制造商:Harris Corporation 功能描述: |
| HGTG10N120BN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:35A, 1200V, NPT Series N-Channel IGBT |
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