參數(shù)資料
型號(hào)： HGTD6N40E1S
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 6A, 400V and 500V N-Channel IGBTs
中文描述： 7.5 A, 400 V, N-CHANNEL IGBT, TO-252AA
文件頁數(shù)： 2/4頁
文件大小： 32K
代理商： HGTD6N40E1S
1971
Specifications HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTD6N40E1
HGTD6N40E1S
HGTD6N50E1
HGTD6N50E1S
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown
Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
T
J
= +150
o
C, V
CE
= 400V
T
J
= +150
o
C, V
CE
= 500V
2.0
4.5
2.0
4.5
V
Zero Gate Voltage Collector
Current
I
CES
-
250
-
-
μ
A
-
-
-
250
μ
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V, V
CE
= 0V
T
J
= +150
o
C, I
C
= 3A, V
GE
= 10V
T
J
= +150
o
C, I
C
= 3A, V
GE
= 15V
T
J
= +25
o
C, I
C
= 3A, V
GE
= 10V
T
J
= +25
o
C, I
C
= 3A, V
GE
= 15V
-
100
-
100
nA
Collector-Emitter On-Voltage
V
CE(ON)
-
2.9
-
2.9
V
-
2.5
-
2.5
V
-
2.5
-
2.5
V
-
2.4
-
2.4
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 3A, V
CE
= 10V
6.5 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 3A, V
CE
= 10V
6.9 (Typ)
nC
Turn-On Delay Time
t
D(ON)
Resistive Load, I
C
= 3A,
V
CE
= 400V, R
L
= 133
,
T
J
= +150
o
C, V
GE
= 10V,
R
G
= 25
90 (Typ)
ns
Rise Time
t
R
32 (Typ)
ns
Turn-Off Delay Time
t
D(OFF)
24 (Typ)
ns
Fall Time
t
F
1100 (Typ)
ns
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation =
W
OFF
x Frequency)
W
OFF
0.29 (Typ)
mJ
Turn-Off Delay Time
t
D(OFF)I
Inductive Load (See Figure 11),
I
C
= 3A, V
CE(CLP)
= 400V,
R
L
= 133
, L = 50
μ
H, T
J
= +150
o
C,
V
GE
= 10V, R
G
= 25
-
190
-
190
ns
Fall Time
t
FI
-
1
-
1
μ
s
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation =
W
OFF
x Frequency)
W
OFF
-
0.43
-
0.43
mJ
Thermal Resistance Junction-to-
Case (IGBT)
R
θ
JC
-
2.08
-
2.08
o
C/W
Typical Performance Curves
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
7.5
6.0
4.5
3.0
1.5
0.0
I
C
,
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE TEST, V
CE
= 10V
PULSE DURATION = 250
μ
s
DUTY CYCLE < 2%
T
C
= -55
o
C
T
C
= +25
o
C
T
C
= +150
o
C
I
C
,
0
2
4
6
8
10
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
C
= +25
o
C
V
GE
= 15V
V
GE
= 10V
V
GE
= 7.5V
V
GE
= 7.0V
V
GE
= 6.5V
V
GE
= 6.0V
V
GE
= 5.5V
V
GE
= 5.0V
7.5
6.0
4.5
3.0
1.5
0.0
相關(guān)PDF資料
PDF描述
HGTD6N50E1 6A, 400V and 500V N-Channel IGBTs
HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs
HGTD7N60C3S 14A, 600V, UFS Series N-Channel IGBTs(14A, 600V, UFS系列N溝道絕緣柵雙極型晶體管)
HGTD7N60C3 14A, 600V, UFS Series N-Channel IGBTs
HGTD7N60C3S 14A, 600V, UFS Series N-Channel IGBTs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTD6N50E1 制造商:Harris Corporation 功能描述:
HGTD6N50E1S 制造商:Rochester Electronics LLC 功能描述:
HGTD7N60A4S 功能描述:IGBT 晶體管 TO-252 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTD7N60A4S9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 34A I(C) | TO-252AA
HGTD7N60B3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
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