- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384405 > HGTA32N60E2 (HARRIS SEMICONDUCTOR) Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 100uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk PDF資料下載
參數(shù)資料
| 型號： | HGTA32N60E2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 100uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, MO-093AA |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 31K |
| 代理商： | HGTA32N60E2 |
3-117
Specifications HGTA32N60E2
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
250
μ
A
V
CE
= 0.8 BV
CES
T
C
= +125
o
C
-
-
4.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C90
,
V
GE
= 15V
T
C
= +25
o
C
-
2.4
2.9
V
T
C
= +125
o
C
-
2.4
3.0
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1.0mA,
V
CE
= V
GE
T
C
= +25
o
C
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
500
nA
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C90
, V
CE
= 0.5 BV
CES
-
6.5
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
200
260
nC
V
GE
= 20V
-
265
345
nC
Current Turn-On Delay Time
t
D(ON)I
L = 500
μ
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 15V, T
J
= +125
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
630
820
ns
Current Fall Time
t
FI
-
620
800
ns
Turn-Off Energy (Note 1)
W
OFF
-
3.5
-
mJ
Thermal Resistance
R
θ
JC
-
0.5
0.6
o
C/W
NOTE:
1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A) The HGTA32N60E2 was tested per JEDEC standard No. 24-1 Meth-
od for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
100
80
60
40
20
0
I
C
,
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 15V
T
C
= +150
o
C
T
C
= +25
o
C
T
C
= -40
o
C
100
90
80
70
60
50
40
30
20
10
0
I
C
,
0
2
4
6
8
10
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
C
= +25
o
C
V
GE
= 7.5V
V
GE
= 6.5V
V
GE
= 6.0V
V
GE
= 7.0V
V
GE
= 15V
V
GE
= 10V
V
GE
= 8.0V
V
GE
= 5.5V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTD6N40E1 | 6A, 400V and 500V N-Channel IGBTs |
| HGTD6N40E1S | 6A, 400V and 500V N-Channel IGBTs |
| HGTD6N50E1 | 6A, 400V and 500V N-Channel IGBTs |
| HGTD6N50E1S | 6A, 400V and 500V N-Channel IGBTs |
| HGTD7N60C3S | 14A, 600V, UFS Series N-Channel IGBTs(14A, 600V, UFS系列N溝道絕緣柵雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTB12N60D1C | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD10N40F1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD10N40F1S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD10N50F1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTD10N50F1S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。