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參數(shù)資料
| 型號(hào)： | HGT4E30N60B3DS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-268AA |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 214K |
| 代理商： | HGT4E30N60B3DS |
2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 18. RECOVERY TIME vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
C
2
4
6
8
10
C
RES
FREQUENCY = 1MHz
C
OES
C
IES
Z
θ
J
,
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
10
-1
10
-2
SINGLE PULSE
10
0
10
-1
10
-2
P
D
t
1
t
2
0.50
0.05
0.01
0.02
0.10
0.20
I
E
,
V
EC
, FORWARD VOLTAGE (V)
3.0
2.0
2.5
1.5
1.0
0.5
0
0
25
50
75
100
125
3.5
4.0
150
175
200
100
o
C
25
o
C
-55
o
C
30
40
20
0
t
I
EC
, FORWARD CURRENT (A)
2
30
1
10
10
20
50
5
t
rr
t
a
t
b
T
C
= 25
o
C, dI
EC
/dt = 200A/
μ
s
HGTG30N60B3D, HGT4E30N60B3DS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT4E30N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT4E30N60C3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT5A27N120BN | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:72A, 1200V, NPT Series N-Channel IGBT |
| HGT5A40N60A4D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTA32N60E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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