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參數(shù)資料
| 型號： | HGT1S2N120BNS |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | XC9536-7PC44I - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 12 A, 1200 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 498K |
| 代理商： | HGT1S2N120BNS |
4
www.fairchildsemi.com
HGTP2N120CN, HGT1S2N120CN Rev. C
H
Typical Performance Characteristics
Figure 1. DC Collector Current vs
Case Temperature
Figure 2. Minimum Switching Safe Operating
Area
Figure 3. Operating Frequency vs Collector to
Emitter Currentl
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
25
75
100
125
150
2
10
V
GE
= 15V
12
14
8
6
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
10
0
I
C
,
4
6
600
800
400
200
1000
1200
0
12
14
8
2
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 5mH
16
f
M
,
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
5
50
100
200
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 1.2
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
V
GE
15V
12V
110
o
C
110
o
C
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 5mH
1
3
4
2
IDEAL DIODE
T
C
= 75
o
C,V
GE
= 15V
T
C
75
o
C 15V
V
GE
75
o
C 12V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
20
30
40
50
10
0
20
30
40
50
10
0
10
14
15
13
12
11
V
CE
= 840V, R
G
= 51
, T
J
= 125
o
C
I
SC
t
SC
0
1
2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
3
4
5
10
8
6
T
C
= 25
o
C
T
C
= 150
o
C
250
μ
S PULSE TEST
DUTY CYCLE <0.5%, V
GE
= 12V
T
C
= -55
o
C
6
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2
4
6
0
1
2
3
4
5
8
0
10
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
250
μ
s PULSE TEST
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S2N120CNS | XC9536-7VQ44C - NOT RECOMMENDED for NEW DESIGN |
| HGTP2N120BN | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTP2N120BND | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTP2N120CN | 13A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120CNDS | 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S2N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S2N120CN | 功能描述:IGBT 晶體管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S2N120CNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGT1S2N120CNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-263AB |
| HGT1S2N120CNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
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