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參數(shù)資料
| 型號(hào)： | HGT1S20N60C3RS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | HGT1S20N60C3RS |
5-5
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR EMITTER ON STATE VOLTAGE
FIGURE 4. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
FIGURE 5. TURN ON DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 6. TURN OFF DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
9
10
13
20
50
60
70
15
30
80
I
C
,
8
7
6
11
12
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
10
0
40
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250
μ
s
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
15
20
25
30
35
40
4
3
2
1
0
5
6
7
8
9
10
10
5
0
V
GE
= 15.0V
12.0V
10.0V
9.0V
8.5V
8.0V
7.5V
DUTY CYCLE <0.5%, T
C
= 25
o
C
PULSE DURATION = 250
μ
s
I
C
,
40
2
6
4
10
50
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
30
60
70
80
8
0
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -40
o
C
0
10
20
90
1
3
5
7
9
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%
V
GE
= 15V
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
V
GE
= 15V
5
10
15
25
35
40
26
28
30
32
34
t
D
,
I
CE
, COLLECTOR-EMITTER CURRENT (A)
36
38
20
30
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 15V
t
D
,
5
10
15
I
CE
, COLLECTOR EMITTER CURRENT (A)
25
35
20
300
400
425
350
325
275
40
30
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V, V
GE
= 15V
375
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP20N60C3R | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| HGTG20N60C3R | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| HGT1S20N60C3S | 45A, 600V, UFS Series N-Channel IGBT |
| HGT1S20N60C3S | XC9536-7PC44C - NOT RECOMMENDED for NEW DESIGN |
| HGT1S20N60C3S9A | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S20N60C3S | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:45A, 600V, UFS Series N-Channel IGBT |
| HGT1S20N60C3S9A | 功能描述:IGBT 晶體管 45a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S2N120BNDS | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S2N120BNDS9A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
| HGT1S2N120BNS | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
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