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參數(shù)資料
| 型號： | HGT1S20N60C3R |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | XC9536-7CS48C - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 第40A，600V的，堅固的ufs系列N溝道IGBT的 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 107K |
| 代理商： | HGT1S20N60C3R |
5-8
All Harris Semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call
1-800-4-HARRIS
NORTH AMERICA
Harris Semiconductor
P. O. Box 883, Mail Stop 53-210
Melbourne, FL 32902
TEL: 1-800-442-7747
(407) 729-4984
FAX: (407) 729-5321
EUROPE
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Mercure Center
100, Rue de la Fusee
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TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
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TEL: (65) 748-4200
FAX: (65) 748-0400
S E M I C O N D U C T O R
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBT’s
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD
LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5.
Gate Voltage Rating
- Never exceed the gate-voltage
rating of V
GEM
. Exceeding the rated V
GE
can result in
permanent damage to the oxide layer in the gate region.
6.
Gate Termination
- The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7.
Gate Protection
- These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
ECCOSORBD
is a Trademark of Emerson and Cumming, Inc.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 11) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 3, 5, 6, 9
and 10. The operating frequency plot (Figure 11) of a typical
device shows f
MAX1
or f
MAX2
whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on- state time for a 50% duty factor. Other definitions are
possible. t
D(OFF)I
and t
D(ON)I
are defined in Figure 17.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JMAX
.
t
D(OFF)I
is important when controlling output ripple under a
lightly loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON
). The
allowable dissipation (P
D
) is defined by P
D
= (T
JMAX
-
T
C
)/R
θ
JC
. The sum of device switching and conduction
losses must not exceed P
D
. A 50% duty factor was used
(Figure 11) and the conduction losses (P
C
) are approxi-
mated by P
C
= (V
CE
x I
CE
)/2.
E
ON
and E
OFF
are defined in the switching waveforms
shown in Figure 17. E
ON
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-on and E
OFF
is the inte-
gral of the instantaneous power loss (I
CE
x V
CE
) during turn-
off. All tail losses are included in the calculation for E
OFF
; i.e.
the collector current equals zero (I
CE
= 0).
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S20N60C3RS | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| HGTP20N60C3R | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| HGTG20N60C3R | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| HGT1S20N60C3S | 45A, 600V, UFS Series N-Channel IGBT |
| HGT1S20N60C3S | XC9536-7PC44C - NOT RECOMMENDED for NEW DESIGN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S20N60C3RS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:40A, 600V, Rugged UFS Series N-Channel IGBTs |
| HGT1S20N60C3S | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:45A, 600V, UFS Series N-Channel IGBT |
| HGT1S20N60C3S9A | 功能描述:IGBT 晶體管 45a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S2N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S2N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
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