- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384405 > HGT1S1N120BNDS (INTERSIL CORP) 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) PDF資料下載
參數(shù)資料
| 型號(hào)： | HGT1S1N120BNDS |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| 中文描述： | 5.3 A, 1200 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 6/7頁 |
| 文件大小： | 75K |
| 代理商： | HGT1S1N120BNDS |
6
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
0.005
0.01
1.0
10
-3
10
-2
10
-1
10
0
10
-4
10
-5
2.0
0.1
t
1
t
2
P
D
SINGLE PULSE
0.1
0.5
0.05
0.01
0.02
0.2
1
2
J
D
θ
θ
C
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
I
E
,
1
0.1
0.5
2
5
V
EC
, FORWARD VOLTAGE (V)
0.4
0
0.8
1.2
1.6
2.0
0.2
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
t
40
0
10
60
70
I
EC
, FORWARD CURRENT (A)
5
4
3
2
1
0.5
20
50
30
T
C
= 25
o
C, dI
EC
/dt = 200A/
μ
s
t
rr
t
a
t
b
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
R
G
= 82
L = 4mH
V
DD
= 960V
+
-
RHRD4120
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
I
CE
HGTP1N120BND, HGT1S1N120BNDS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP1N120BND | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| HGT1S20N60A4S9A | 600V, SMPS Series N-Channel IGBTsnull |
| HGT1S20N60B3S | XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN |
| HGT1S20N60B3S | 40A, 600V, UFS Series N-Channel IGBTs |
| HGTG20N60B3 | 40A, 600V, UFS Series N-Channel IGBTs(40A, 600V，N溝道絕緣柵雙極晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S1N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.3A I(C) | TO-263AB |
| HGT1S1N120CNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S1N120CNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB |
| HGT1S20N35F3VLR4505 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S20N35G3VL | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。