參數(shù)資料
型號(hào): HGT1S14N37G3VLS9A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 功率晶體管
英文描述: TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
中文描述: 25 A, N-CHANNEL IGBT, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 159K
代理商: HGT1S14N37G3VLS9A
2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 10. TRANSFER CHARACTERISTIC
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
15
0
2
3
30
5
4
45
I
C
,
0
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= 175
o
C
V
GE
= 5.0V
V
GE
= 4.0V
V
GE
= 4.5V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
1
2
5
0
30
3
4
15
45
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= 150
o
C
V
GE
= 5.0V
V
GE
= 4.0V
V
GE
= 4.5V
0
2
3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
4
5
50
30
60
1
40
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= 25
o
C
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
20
40
60
50
70
0
2
3
4
1
10
30
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= -40
o
C
5
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
40
30
20
50
60
3
2
4
5
0
1
I
C
,
V
GE
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
T
J
= 25
o
C
0
32
40
2
1
3
4
5
16
8
24
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
C
,
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 5V
T
J
= 150
o
C
T
J
= -40
o
C
T
J
= 25
o
C
HGT1S14N37G3VLS, HGTP14N37G3VL
相關(guān)PDF資料
PDF描述
HGT1S14N37G3VLS TRANS PNP BIPOLAR 45V SOT323
HGTP14N40F3VL 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
HGTP14N40F3VL 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT
HGT1S14N40F3VLS 330mJ, 400V, N-Channel Ignition IGBT
HGTP14N41G3VLS 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S14N40F3VLS 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S14N40G3VLS 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S14N41G3VLS 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S14N41G3VLS9A 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 395V V(BR)CES | 18A I(C) | TO-263AB
HGT1S14N41G3VLT 制造商:Fairchild Semiconductor Corporation 功能描述: