參數(shù)資料
型號: HGT1S14N36G3VLS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: DIODE ZENER SINGLE 500mW 39Vz 3.2mA-Izt 0.05 0.1uA-Ir 32Vr DO35-GLASS 5K/AMMO
中文描述: 18 A, N-CHANNEL IGBT, TO-263AB
封裝: LEAD FREE, TO-263AB, 2 PIN
文件頁數(shù): 5/8頁
文件大?。?/td> 224K
代理商: HGT1S14N36G3VLS
2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY
AS A FUNCTION OF INDUCTANCE
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
(Continued)
L, INDUCTANCE (mH)
0
2
4
6
8
10
20
10
I
C
,
15
5
25
+25
o
C
+175
o
C
V
GE
= 5V
0
2
4
6
8
10
L, INDUCTANCE (mH)
E
A
,
150
200
250
300
350
400
450
500
550
600
650
+25
o
C
+175
o
C
V
GE
= 5V
C
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
400
600
800
1400
1600
1800
2000
C
RES
C
OES
C
IES
1200
1000
FREQUENCY = 1MHz
200
0
Q
G
, GATE CHARGE (nC)
12
10
8
6
4
2
0
6
5
1
0
4
3
2
0
5
15
20
25
30
V
C
,
V
G
,
REF I
G
= 1mA, R
L
= 1.7
, T
C
= +25
o
C
10
V
CE
= 12V
V
CE
= 4V
V
CE
= 8V
相關(guān)PDF資料
PDF描述
HGTP14N37G3VL TRANSISTOR PNP BIPOLAR 45V SOT23
HGT1S14N37G3VLS9A TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
HGT1S14N37G3VLS TRANS PNP BIPOLAR 45V SOT323
HGTP14N40F3VL 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
HGTP14N40F3VL 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S14N36G3VLS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 390V V(BR)CES | 18A I(C) | TO-263AB
HGT1S14N36G3VLT 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S14N36G3VLT_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S14N37G3VLS 功能描述:IGBT 晶體管 14A 370V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S14N37G3VLS9A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB