- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384404 > HGT1S12N60C3S (FAIRCHILD SEMICONDUCTOR CORP) 24A, 600V, UFS Series N-Channel IGBTs PDF資料下載
參數(shù)資料
| 型號： | HGT1S12N60C3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 24A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 172K |
| 代理商： | HGT1S12N60C3S |
2001 Fairchild Semiconductor Corporation
HGTP12N60C3, HGT1S12N60C3S Rev. B
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
5
10
20
30
10
100
200
1
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
=
1.2
o
C/W
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 25
, L = 100
μ
H
V
GE
= 15V
V
GE
= 10V
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
20
40
60
80
T
J
= 150
o
C, V
GE
= 15V, R
G
= 25
, L = 100
μ
H
100
LIMITED BY
CIRCUIT
C
OES
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
500
1000
1500
2000
2500
C
C
IES
FREQUENCY = 1MHz
V
G
,
V
C
,
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 1.276mA, R
L
= 50
, T
C
= 25
o
C
0
240
120
360
480
600
15
12
9
6
3
0
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
10
20
30
40
50
60
0
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
HGTP12N60C3, HGT1S12N60C3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S12N60C3S | 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S1N120BNDS | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| HGTP1N120BND | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| HGT1S20N60A4S9A | 600V, SMPS Series N-Channel IGBTsnull |
| HGT1S20N60B3S | XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S12N60C3S9A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3S9AR4501 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S14N36G3VL | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGT1S14N36G3VLS | 功能描述:IGBT 晶體管 Coil Dr 14A 360V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S14N36G3VLS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 390V V(BR)CES | 18A I(C) | TO-263AB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。