參數(shù)資料
型號(hào)： HGT1S12N60C3S9A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
中文描述： 24 A, 600 V, N-CHANNEL IGBT, TO-263AB
文件頁數(shù)： 4/7頁
文件大小： 172K
代理商： HGT1S12N60C3S9A
2001 Fairchild Semiconductor Corporation
HGTP12N60C3, HGT1S12N60C3S Rev. B
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d
,
10
20
30
5
10
15
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
25
30
50
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
400
300
200
100
5
10
15
20
25
30
T
J
= 150
o
C, R
G
= 25
, L = 100mH, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
5
10
100
5
10
15
20
25
30
V
GE
= 15V
V
GE
= 10V
200
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
100
90
80
5
10
15
20
25
30
200
300
T
J
= 150
o
C, R
G
= 25
, L = 100mH, V
CE(PK)
= 480V
V
GE
= 10V or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
5
10
15
20
E
O
,
V
GE
= 15V
0.5
1.0
1.5
2.0
25
30
V
GE
= 10V
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
3.0
0
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V or 15V
HGTP12N60C3, HGT1S12N60C3S
相關(guān)PDF資料
PDF描述
HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
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HGTP1N120BND 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）)
HGT1S20N60A4S9A 600V, SMPS Series N-Channel IGBTsnull
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