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參數(shù)資料
| 型號： | HGT1S12N60B3DS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| 中文描述： | 27 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 124K |
| 代理商： | HGT1S12N60B3DS |
2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG12N60C3D
600
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
At T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At T
C
= 110
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Average Diode Forward Current at 110
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
J
= 150
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T
C
> 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
CES
o
C25
24
12
15
96
±
20
±
30
A
A
A
A
V
V
o
C110
o
(AVG)
CM
GES
GEM
o
24A at 600V
104
0.83
-40 to 150
260
4
13
o
D
W
o
W/
o
o
C
J
, T
STG
C
C
s
s
L
o
SC
μ
μ
SC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
C, R
G
= 25
o
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
I
C
V
= 250
μ
A, V
GE
= 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
= 10mA, V
GE
= 0V
15
25
-
V
Collector to Emitter Leakage Current
I
CES
CE
= BV
CES
T
C
= 25
o
C
o
-
-
250
μ
A
V
CE
= I
GE
= BV
CES
,
T
C
= 150
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
V
C
C110
= 15V
T
C
= 25
o
C
o
-
1.65
2.0
V
T
C
= 150
C
-
1.85
2.2
V
I
V
C
= 15A,
GE
= 15V
T
C
= 25
o
C
o
-
1.80
2.2
V
T
C
= 150
C
-
2.0
2.4
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
V
C
= 250
CE
= V
=
μ
GE
20V
o
C,
A,
T
C
= 25
o
C
3.0
5.0
6.0
V
Gate to Emitter Leakage Current
I
GES
SSOA
V
GE
= 150
GE
= 15V,
R
G
= 25
L = 100
±
-
-
±
100
nA
Switching SOA
T
V
J
,
μ
H
V
CE(PK)
V
CE(PK)
= 480V
80
-
-
A
= 600V
24
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
I
C
V
= I
C110
, V
CE
= 0.5 BV
CES
= 15V
-
7.6
-
V
On-State Gate Charge
Q
G(ON)
= I
CE
C110
= 0.5 BV
,
CES
V
GE
-
48
55
nC
V
GE
= 20V
-
62
71
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
T
I
CE
V
CE(PK)
V
GE
R
G
= 25
L = 100
J
= 150
= I
o
C,
C110,
= 0.8 BV
= 15V,
,
μ
H
CES,
-
14
-
ns
Current Rise Time
-
16
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
t
fI
E
ON
E
OFF
V
EC
-
270
400
ns
Current Fall Time
-
210
275
ns
Turn-On Energy
-
380
-
μ
μ
J
Turn-Off Energy (Note 3)
-
900
-
J
Diode Forward Voltage
I
EC
= 12A
-
1.7
2.0
V
HGTG12N60C3D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S12N60B3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60C3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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