參數(shù)資料
型號: HFM105-L
廠商: 美麗微半導體有限公司
英文描述: Chip Silicon Rectifier - Ultra fast recovery type
中文描述: 芯片硅整流-超快速恢復類型
文件頁數(shù): 2/2頁
文件大?。?/td> 27K
代理商: HFM105-L
RECTRON
RATING AND CHARACTERISTIC CURVES ( HFM101 THRU HFM108 )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
NONINDUCTIVE
10
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
10/20 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
A
AMBIENT TEMPERATURE ( )
2.0
1.0
0
25 50 75 100125150175
0
Single Phase
Half Wave 60Hz
Inductive Load
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
I
INSTANTANEOUS FORWARD VOLTAGE, (V)
10
1.0
.1
.01
.001
0
.2
.4
.6
.8
1.0
1.2 1.4 1.6
1.8
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
HM0~F13
HM0~FM0
I
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01
40
0
20
60
80
100
120
140
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
J
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0 2
4
10
20 40
100
HFM101~HFM105
HFM106~HFM108
TJ = 25
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
P
NUMBER OF CYCLES AT 60Hz
70
60
50
40
30
20
10
0
1
2
5
10
20
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
相關PDF資料
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HFM105-M Ultra fast recovery type
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