參數(shù)資料
型號： HFM101
廠商： RECTRON LTD
元件分類： 參考電壓二極管
英文描述： RESISTOR WIREWOUND 7.0K OHM 3W
中文描述： 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數(shù)： 2/2頁
文件大小： 27K
代理商： HFM101
RECTRON
RATING AND CHARACTERISTIC CURVES ( HFM101 THRU HFM108 )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
NONINDUCTIVE
10
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
10/20 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
A
AMBIENT TEMPERATURE ( )
2.0
1.0
0
25 50 75 100125150175
0
Single Phase
Half Wave 60Hz
Inductive Load
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
I
INSTANTANEOUS FORWARD VOLTAGE, (V)
10
1.0
.1
.01
.001
0
.2
.4
.6
.8
1.0
1.2 1.4 1.6
1.8
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
HM0~F13
HM0~FM0
I
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01
40
0
20
60
80
100
120
140
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
J
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0 2
4
10
20 40
100
HFM101~HFM105
HFM106~HFM108
TJ = 25
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
P
NUMBER OF CYCLES AT 60Hz
70
60
50
40
30
20
10
0
1
2
5
10
20
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
相關(guān)PDF資料
PDF描述
HFM102 SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)
HFM103 SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)
HFM104 SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)
HFM105 SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)
HFM106 Ultra fast recovery type
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