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參數(shù)資料
| 型號： | HFA80NK40C |
| 英文描述： | 400V 80A HEXFRED Common Cathode Diode in a TO-249AA Non-Isolated package |
| 中文描述： | 400V 80A條HEXFRED二極共陰極二極管采用TO - 249AA非隔離封裝 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 208K |
| 代理商： | HFA80NK40C |
PD -2.472 rev. B 01/99
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of
Recovery Parameters
Features
Description
HEXFRED
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally
suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
TM
diodes are optimized to reduce losses and EMI/RFI in high frequency
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA80NC40CSL
SLD-61-8
V
R
= 400V
V
F
(typ.)
= 1V
I
F(AV)
= 80A
Q
rr
(typ.) = 200nC
I
RRM
(typ.)
= 6A
t
rr
(typ.)
= 30ns
di
(rec)M
/dt (typ.)
= 190A/μs
Absolute Maximum Ratings (per Leg)
Parameter
V
R
Cathode-to-Anode Voltage
I
F
@ T
C
= 25°C
Continuous Forward Current
I
F
@ T
C
= 100°C
Continuous Forward Current
I
FSM
Single Pulse Forward Current
E
AS
Non-Repetitive Avalanche Energy
P
D
@ T
C
= 25°C
Maximum Power Dissipation
P
D
@ T
C
= 100°C
Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Note:
Limited by junction temperature
L = 100μH, duty cycle limited by max T
J
125°C
Thermal - Mechanical Characteristics
Parameter
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
Weight
Min.
––––
––––
––––
Typ.
––––
––––
Max.
0.85
0.42
––––
Units
°C/W
K/W
R
thJC
Wt
4.3 (0.15)
g (oz)
W
Max.
400
85
42
300
1.4
150
59
Units
V
A
mJ
300 (0.063 in. (1.6mm) from case)
-55 to +150
°C
1
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|---|---|
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