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參數(shù)資料
| 型號： | HFA3925 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 衰減器 |
| 英文描述： | 2.4GHz - 2.5GHz 250mW Power Amplifier(2.4GHz - 2.5GHz 250mW 功率放大器) |
| 中文描述： | 2400 MHz - 2483.5 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 112K |
| 代理商： | HFA3925 |
2-3
Absolute Maximum Ratings
Thermal Information
Maximum Input Power (Note 2) . . . . . . . . . . . . . . . . . . . . . . +23dBm
Operating Voltages (Notes 2, 3). . . . . . . . . . . .V
DD
= 8V, V
GG
= -8V
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
Thermal Resistance (Typical, Note 1)
SSOP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
θ
JA
(
o
C/W)
88
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
T
A
= 25
o
C, Z
0
= 50
, V
DD
= +5V, P
IN
= -30dBm, f = 2.45GHz, Unless Otherwise Specified
PARAMETER
MIN
TYP
MAX
UNITS
POWER AMPLIFIER
Linear Gain
27
28
32
dB
VSWR In/Out
-
1.75:1
-
Input Return Loss
-
-11.3
-
dB
Output Return Loss
-
-11.3
-
dB
Output Power at P
1dB
22.5
24.5
-
dBm
Second Harmonic at P
1dB
-
-20
0
dBc
Third Harmonic at P
1dB
-
-30
-10
dBc
IDD at P1dB (VDD1 + VDD2 + VDD3)
-
270
375
mA
NOTES:
2. Ambient temperature (T
A
) = 25
o
C.
3. |V
DD
| + |V
GG
| not to exceed 12V.
Pin Description
PINS
SYMBOL
DESCRIPTION
1
GND
DC and RF Ground.
2
GND
DC and RF Ground.
3
GND
DC and RF Ground.
4
GND
DC and RF Ground.
5
GND
DC and RF Ground.
6
GND
DC and RF Ground.
7
GND
DC and RF Ground.
8
RX OUT
Output of T/R Switch for receive mode.
9
V
G2
Negative bias control for the second PA stage, adjusted to set V
DD2
quiescent bias current, which is
typically 53mA. Typical voltage at pin = -0.75V. Input impedance: > 1M
.
10
GND
DC and RF Ground.
11
V
DD1
Positive bias for the first stage of the PA, 2.7V to 6V.
12
GND
DC and RF Ground.
13
GND
DC and RF Ground.
14
V
G1
Negative bias control for the first PA stage, adjusted to set V
DD1
quiescent bias current, which is typically
20mA. Typical voltage at pin = -0.75V. Input impedance: > 1M
.
15
RF IN
RF Input of the Power Amplifier.
16
GND
DC and RF Ground.
HFA3925
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