參數(shù)資料
型號(hào)： HFA3134IHZ96
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： Ultra High Frequency Matched Pair Transistors
中文描述： 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-6
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 184K
代理商： HFA3134IHZ96
3
FN4445.2
August 12, 2005
DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN)
Noise Figure
NF
f = 1.0GHz, I
C
= 10mA,
1V
≤
V
CE
≤
5V, Z
S
= 50
B
-
2.4
-
dB
f = 1.0GHz, I
C
= 1mA,
1V
≤
V
CE
≤
5V, Z
S
= 50
B
-
2.6
-
dB
Current Gain-Bandwidth Product
(Note 5)
f
T
I
C
= 10mA, V
CE
= 5V
B
-
8.5
-
GHz
I
C
= 1mA, V
CE
= 5V
B
-
3
-
GHz
Power Gain-Bandwidth Product
f
MAX
I
C
= 10mA, V
CE
= 5V
B
-
7.5
-
GHz
Base to Emitter Capacitance
V
BE
= -0.5V
B
-
600
-
fF
Collector to Base Capacitance
V
CB
= 3V
B
-
500
-
fF
Electrical Specifications
T
A
= 25°C
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
(NOTE 3)
TEST
LEVEL
MIN
TYP
MAX
UNITS
Electrical Specifications
T
A
= 25°C
PARAMETER
SYMBOL
TEST CONDITIONS
(NOTE 3)
TEST
LEVEL
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR HFA3135 (PNP)
Collector to Base Breakdown Voltage
V
(BR)CBO
I
C
= -10
μ
A, I
E
= 0
A
12
21
-
V
Collector to Emitter Breakdown Voltage
V
(BR)CEO
I
C
= -100
μ
A, I
B
= 0
A
4
14
-
V
V
(BR)CER
I
C
= -100
μ
A, R
B
= 10k
A
11
23
-
V
Emitter to Base Breakdown Voltage (Note 4)
V
(BR)EBO
I
E
= -10
μ
A, I
C
= 0
B
-
5
-
V
Collector-Cutoff-Current
I
CEO
V
CE
= -6V, I
B
= 0
A
-5
-
5
nA
Collector-Cutoff-Current
I
CBO
V
CB
= -8V, I
E
= 0
A
-5
-
5
nA
Emitter-Cutoff-Current
I
EBO
V
EB
= -1V, I
C
= 0
B
-
TBD
-
pA
Collector to Collector Leakage
B
-
1
-
nA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= -10mA, I
B
= -1mA
A
-
150
250
mV
Base to Emitter Voltage
V
BE
I
C
= -10mA, V
CE
= -2V
A
-
850
1000
mV
Q
1
to Q
2
Base to Emitter Voltage Match
V
BE
I
C
= -10mA, V
CE
= -2V
A
-
1
6
mV
I
C
= -1mA, V
CE
= -2V
A
-
1
6
mV
I
C
= -0.1mA, V
CE
= -2V
A
-
2
6
mV
DC Forward-Current Transfer Ratio
h
FE
I
C
= -10mA, V
CE
= -2V
A
15
40
125
I
C
= -1mA, V
CE
= -2V
A
15
47
125
I
C
= -0.1mA, V
CE
= -2V
A
15
52
125
I
C
= -10mA, V
CE
= -5V
A
15
47
125
I
C
= -1mA, V
CE
= -5V
A
15
53
125
I
C
= -0.1mA, V
CE
= -5V
A
15
57
125
Q
1
to Q
2
Current Gain Match
h
FE
-1mA
≤
I
C
≤
-10mA,
-1V
≤
V
CE
≤
-5V
A
-
1
8
%
Early Voltage
V
A
I
C
= -1mA,
V
CE
= -3V
A
15
24
-
V
Base to Emitter Voltage Drift
I
C
= -10mA
C
-
-1.4
-
mV/°C
HFA3134, HFA3135
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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