參數(shù)資料
型號： HFA1113IB
廠商： HARRIS SEMICONDUCTOR
元件分類： 運動控制電子
英文描述： Hook-Up Wire; Conductor Size AWG:30; No. Strands x Strand Size:Solid; Jacket Color:Purple; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061; CSA AWM; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
中文描述： BUFFER AMPLIFIER, PDSO8
文件頁數(shù)： 4/22頁
文件大?。?/td> 568K
代理商： HFA1113IB
192
Specifications HFA1113/883
Rise and Fall Time
T
R
(-1)
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, to 0.1%, V
OUT
=
2V to
0V
1, 2
+25
o
C
-
750
ps
T
F
(-1)
1, 2
+25
o
C
-
800
ps
T
R
(+1)
1, 2
+25
o
C
-
750
ps
T
F
(+1)
1, 2
+25
o
C
-
750
ps
T
R
(+2)
1, 2
+25
o
C
-
1000
ps
T
F
(+2)
1, 2
+25
o
C
-
1000
ps
Overshoot
+OS(-1)
1, 3
+25
o
C
-
30
%
-OS(-1)
1, 3
+25
o
C
-
25
%
+OS(+1)
1, 3
+25
o
C
-
65
%
-OS(+1)
1, 3
+25
o
C
-
60
%
+OS(+2)
1, 3
+25
o
C
-
20
%
-OS(+2)
1, 3
+25
o
C
-
20
%
Settling Time
TS(0.1)
1
+25
o
C
-
20
ns
TS(0.05)
A
V
= +2, to 0.05%,
V
OUT
=
2V to 0V
1
+25
o
C
-
33
ns
2nd Harmonic Distortion
HD2(30)
A
V
= +2, f = 30MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-45
dBc
HD2(50)
A
V
= +2, f = 50MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-40
dBc
HD2(100)
A
V
= +2, f = 100MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-35
dBc
3rd Harmonic Distortion
HD3(30)
A
V
= +2, f = 30MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-65
dBc
HD3(50)
A
V
= +2, f = 50MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-55
dBc
HD3(100)
A
V
= +2, f = 100MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-45
dBc
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot-to-lot and within lot variation.
2. Measured between 10% and 90% points.
3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for A
V
= +1. Please refer to
Performance Curves.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3
Group A Test Requirements
1, 2, 3
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Characterized at: V
SUPPLY
=
±
5V, R
L
= 1
00
, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
511106-883
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