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參數(shù)資料
| 型號(hào)： | HFA08TB120S |
| 英文描述： | 1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package |
| 中文描述： | 1200伏8A條HEXFRED二極分立二極管一名D2級(jí)，白（HEXFRED二極）封裝 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 226K |
| 代理商： | HFA08TB120S |
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Single Pulse Avalanche Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
Units
V
V
R
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FSM
I
FRM
I
AS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
8.0
130
32
8.0
73.5
29
PD -2.365A
Ultrafast Recovery
Ultrasoft Recovery
Very Low
I
RRM
Very Low
Q
rr
Guaranteed Avalanche
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA08PB120 is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 volts and 8 amps continuous current, the HFA08PB120
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (I
RRM
) and does not
exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA08PB120 is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Absolute Maximum Ratings
Features
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA08PB120
-55 to +150
W
A
°C
5/12/97
V
R
= 1200V
V
F
(typ.)* = 2.4V
I
F(AV)
= 8.0A
Q
rr
(typ.)= 140nC
I
RRM
(typ.)
= 4.5A
t
rr
(typ.)
= 28ns
di
(rec)M
/dt (typ.)* = 85A/μs
*
125°C
TO-247AC
(Modified)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HFA08TB60S | 600V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package |
| HFA08TB120 | Ultrafast, Soft Recovery Diode |
| HFA08PB120 | Ultrafast, Soft Recovery Diode |
| HFA08TB60 | Ultrafast, Soft Recovery Diode |
| HFA08TA60 | Ultrafast, Soft Recovery Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HFA08TB120SPBF | 制造商:Vishay Angstrohm 功能描述:Diode Switching 1.2KV 8A 3-Pin(2+Tab) D2PAK Tube |
| HFA08TB120SPBF_10 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:HEXFRED Ultrafast Soft Recovery Diode, 8 A |
| HFA08TB120STRL | 功能描述:整流器 1200 Volt 8.0 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HFA08TB120STRLP | 制造商:Vishay Angstrohm 功能描述:Diode Switching 1.2KV 8A 3-Pin(2+Tab) D2PAK T/R |
| HFA08TB120STRLPBF | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:HEXFRED Ultrafast Soft Recovery Diode, 8 A |
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