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參數(shù)資料
| 型號： | HF75-12 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 20K |
| 代理商： | HF75-12 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 50 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
UNITS
V
BV
CES
I
C
= 100 mA
36
V
BV
CEO
I
C
= 100 mA
18
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CES
V
CE
= 15 V
15
mA
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
20
200
---
C
OB
V
CB
= 12.5 V f = 1.0 MHz
350
pF
G
PE
IMD
3
h
C
V
CC
= 12.5 V I
CQ
= 100 mA P
OUT
= 75 W
(
PEP
)
f = 30.000 & 30.001 MHz
13
-30
14
55
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
HF75-12
DESCRIPTION:
The
HF75-12
is Designed for 12.5 Volt
Class AB & C HF Power Amplifier
Applications in the 2 to 32 MHz Band.
FEATURES INCLUDE:
Replacement for
MRF454
&
SD1405
P
G
= 18 dB Typical @ 30MHz & 75W
Withstands
20:1 Load VSWR
MAXIMUM RATINGS
I
C
20 A
V
CB
36 V
V
CE
18 V
V
EB
4.0 V
P
DISS
270 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
0.65
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE .500" 4L FLANGE
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
相關PDF資料 |
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| HF75-50F | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HF75-12_1 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| HF7520 | 制造商:HONGFA 制造商全稱:Hongfa Technology 功能描述:SUBMINIATURE POWER RELAY |
| HF7520/005-HPQXXX | 制造商:HONGFA 制造商全稱:Hongfa Technology 功能描述:SUBMINIATURE POWER RELAY |
| HF7520/005-HPXXX | 制造商:HONGFA 制造商全稱:Hongfa Technology 功能描述:SUBMINIATURE POWER RELAY |
| HF7520/005-HQXXX | 制造商:HONGFA 制造商全稱:Hongfa Technology 功能描述:SUBMINIATURE POWER RELAY |
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