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參數資料
| 型號： | HF30-28S |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.380 INCH, STUD PACKAGE-4 |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 17K |
| 代理商： | HF30-28S |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 10 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
UNITS
V
---
BV
CES
I
C
= 200 mA
65
---
V
BV
CEO
I
C
= 200 mA
35
---
V
BV
EBO
I
E
= 10 mA
4.0
---
V
I
CES
V
CE
= 30 V
---
10
mA
I
CBO
V
CE
= 30 V
---
1.0
mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA
5.0
200
---
C
OB
V
CB
= 30V
f = 1.0 MHz
---
65
pF
G
P
h
C
V
CE
= 28 V
P
OUT
= 30 W
(PEP)
P
IN
= 7.0 W f = 175 MHz
7.6
60
---
dB
%
NPN SILICON RF POWER TRANSISTOR
HF30-28S
DESCRIPTION:
The
ASI HF30-28S
is Designed for
FEATURES:
P
G
= 20 dB min. at 30 W/30 MHz
·
IMD
3
= -30 dBc max. at 30 W
(PEP)
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CB
V
CE
V
EBO
P
DISS
T
J
T
STG
q
JC
5.0 A
65 V
35 V
4.0 V
60 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
2.9
O
C/W
PACKAGE STYLE .380 4L STUD
ORDER CODE: ASI10605
MINIMUM
inches / mm
.004 / 0.10
.320 / 8.13
.100 / 2.54
.370 / 9.40
B
C
D
E
F
G
H
I
J
A
MAXIMUM
inches / mm
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
.090 / 2.29
.155 / 3.94
.100 / 2.54
.175 / 4.45
.750 / 19.05
DIM
.220 / 5.59
.980 / 24.89
.230 / 5.84
.490 / 12.45
.450 / 11.43
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
E
E
C
B
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