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參數(shù)資料
| 型號(hào)： | HF100-12 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射頻功率晶體管(Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) |
| 中文描述： | Si, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 17K |
| 代理商： | HF100-12 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
UNITS
V
BV
CES
I
C
= 100 mA
36
V
BV
CEO
I
C
= 100 mA
18
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CES
V
CE
= 15 V
20
mA
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
10
200
---
C
OB
V
CB
= 12.5 V
f = 1.0 MHz
400
pF
G
P
IMD
3
V
CE
= 12.5 V
V
CE
= 12.5 V I
CQ
= 150 mA P
OUT
= 100 W
I
CQ
= 150 mA f = 30 MHz
11
13
-30
dB
dBc
NPN SILICON RF POWER TRANSISTOR
HF100-12
DESCRIPTION:
The
ASI HF100-12
is Designed for
FEATURES:
P
G
= 12 dB min. at 100 W/30 MHz
IMD
3
= -30 dBc max. at 100 W
(PEP)
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
q
JC
20 A
36 V
18 V
4.0 V
290 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
0.6
O
C/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10599
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
.230 / 5.84
H
I
.003 / 0.08
.090 / 2.29
.007 / 0.18
.110 / 2.79
DIM
K
L
J
.150 / 3.81
.980 / 24.89
.175 / 4.45
.280 / 7.11
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
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| HF1008-047J | 功能描述:固定電感器 .0047uH 5% .07ohm Unsheilded SMT RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
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