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參數(shù)資料
| 型號： | HEMT-3301 |
| 英文描述： | 940 nm High Radiant Emitter |
| 中文描述： | 940 nm高輻射發(fā)射 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 193K |
| 代理商： | HEMT-3301 |
940 nm High Radiant Emitters
Technical Data
HEMT-3301
HEMT-1001
Features
Nonsaturating, High Radiant
Flux Output
Efficient at Low Currents,
Combined with High
Current Capability
Three Package Styles
Operating Temperature
Range -55
°
C to +100
°
C
Medium-Wide Radiation
Patterns
Radiated Spectrum Matches
Response of Silicon
Photodetectors
Description
The HEMT-3301 and HEMT-1001
are infrared emitters, using a
mesa structure GaAs on GaAs
infrared diode, IRED, optimized
for maximum quantum efficiency
at a peak wavelength of 940 nm.
The HEMT-3301 and HEMT-1001
emitters are untinted, undiffused
plastic packages with medium-
wide radiation patterns. These
Package Dimensions
medium-wide and wide radiation
patterns eliminate the beam
focusing problems that are
encountered with emitters that
have narrow radiation patterns.
Applications include optical
transducers, optical part
counters, smoke detectors, covert
identification, paper tape and
card readers, and optical
encoders.
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