參數(shù)資料
型號: HEF4528BP
廠商: NXP Semiconductors N.V.
元件分類: 振蕩器
英文描述: Dual monostable multivibrator
封裝: HEC4528BT<SOT109-1 (SO16)|<<http://www.nxp.com/packages/SOT109-1.html<1<week 6, 2004,;HEC4528BT<SOT109-1 (SO16)|<<http://www.nxp.com/packages/SOT109-1.html<1<week 6
文件頁數(shù): 7/16頁
文件大?。?/td> 394K
代理商: HEF4528BP
HEF4528B_6
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
7 of 16
NXP Semiconductors
HEF4528B
Dual monostable multivibrator
[1]
The typical values of the propagation delay and transition times are calculated from the extrapolation formulas shown (C
L
in pF).
t
t
is the same as t
THL
and t
TLH
.
For other R
EXT
, C
EXT
combinations and C
EXT
<
0.01
μ
F see
Figure 4
.
For other R
EXT
, C
EXT
combinations and C
EXT
>
0.01
μ
F use formula t
W
= K
×
R
EXT
×
C
EXT
.
where: t
W
= output pulse width (s);
R
EXT
= external timing resistor (
);
C
EXT
= external timing capacitor (F);
K = 0.42 for V
DD
= 5 V;
K = 0.32 for V
DD
= 10 V;
K = 0.30 for V
DD
= 15 V.
T
amb
=
40
°
C to
+
85
°
C;
t
W
is referenced to t
W
at T
amb
= 25
°
C.
[2]
[3]
[4]
[5]
t
W
pulse width
variation
nQ output variation
over temperature
range
5 V
10 V
15 V
5 V
10 V
15 V
5 V
10 V
15 V
5 V
10 V
15 V
[5]
-
-
-
-
-
-
±
3
±
2
±
2
±
2
±
1
±
1
-
-
-
-
-
-
2
2
2
%
%
%
%
%
%
M
M
M
nQ output variation
over voltage range
V
DD
±
5 %
R
EXT
external timing
resistor
see
Figure 4
5
5
5
-
-
-
C
EXT
external timing
capacitor
see
Figure 4
no limits
no limits
no limits
Table 7.
V
SS
= 0 V; T
amb
= 25
°
C; for waveforms see
Figure 6
; for test circuit see
Figure 7
; unless otherwise specified.
Symbol Parameter
Conditions
V
DD
Dynamic characteristics
…continued
Extrapolation formula
[1]
Min
Typ
Max
Unit
Table 8.
P
D
can be calculated from the formulas shown. V
SS
= 0 V; t
r
= t
f
20 ns; T
amb
= 25
°
C.
Symbol
Parameter
V
DD
Typical formula for P
D
(
μ
W)
P
D
dynamic power
dissipation
10 V
P
D
= 20000
×
f
i
+
Σ
(f
o
×
C
L
)
×
V
DD2
15 V
P
D
= 59000
×
f
i
+
Σ
(f
o
×
C
L
)
×
V
DD2
Dynamic power dissipation P
D
where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
DD
= supply voltage in V;
Σ
(f
o
×
C
L
) = sum of the outputs.
5 V
P
D
= 4000
×
f
i
+
Σ
(f
o
×
C
L
)
×
V
DD2
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