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參數(shù)資料
| 型號(hào)： | HDD32M64F8K-13B |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | DDR SDRAM Module 256Mbyte (32Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM, |
| 中文描述： | 256MB的DDR SDRAM內(nèi)存模塊（32Mx64bit）根據(jù)on16Mx8，4Banks，4K的參考。，SMM的， |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 171K |
| 代理商： | HDD32M64F8K-13B |
HANBit
HDD32M64F8K
URL : www.hbe.co.kr 6 HANBit Electronics Co.,Ltd.
REV 1.0 (August.2002)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, V
DD
= 2.5V, T =25
°
C)
VERSION
NOTE
PARAMETER
SYMBO
L
TEST
CONDITION
-10A
-13A
-13B
UNIT
Operating current
(One bank active)
I
DD1
Burst length = 2
t
RC
≥
t
RC
(min), CL=2.5
I
OUT
= 0mA,
Active-Read-Presharge
1520
1600
1600
mA
Precharge standby
current in
power-down mode
I
DD2P
CKE
≤
V
IL
(max)
t
CK
= tCK(min), All banks
idle
48
56
56
mA
Precharge
standby current in
non power-down mode
I
DD2N
CKE
≥
V
IH
(min)
/CS
≥
V
IH
(min), t
CK
= tCK(min)
288
320
320
mA
Active standby current in
power-down mode
I
DD3P
All banks idle, CKE
≤
V
IL
(max), t
CK
= tCK(min)
480
560
560
mA
Active standby current in
non power-down mode
(One bank active)
I
DD3N
Onel banks,
Active-Read-Presharge,
t
RC
=t
RAS
(max),
t
CK
=
tCK(min)
720
800
800
mA
CL=2.
5
Operating current (Read)
I
DD4R
Burst length = 2
t
RC
= t
RC
(min),
I
OUT
= 0mA,
CL=2
1840
2160
2160
mA
CL=2.
5
Operating current (Write)
I
DD4W
Burst length = 2
t
RC
= t
RC
(min)
CL=2
1840
2240
2240
mA
Auto refresh current
I
DD5
t
RC
≥
t
REF
(min)
2720
2880
2880
mA
Self refresh current
I
DD6
CKE
≤
0.2V
32
32
32
mA
AC OPERATING CONDITIONS
PARAMETER
STMBOL
MIN
MAX
UNIT
NOTE
Input High (Logic 1) Voltage, DQ, DQS and DM signals
V
IH
(AC)
VREF + 0.35
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
V
IL
(AC)
VREF - 0.35
V
Input Differential Voltage, CK and CK inputs
V
ID
(AC)
0.7
VDDQ+0.6
V
1
Input Crossing Point Voltage, CK and CK inputs
Notes:
1. VID is the magnitude of the difference between the input level on CK and the input on CK.
V
IX
(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
2.
The value of V
IX
is expected to equal 0.5* V
DDQ
of the transmitting device and must track variations in the DC level
of the same
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