
435
Table 19.19
AC Characteristics of Flash Memory
Conditions: V
CC
= 2.7 V to 5.5 V
*5
, AV
CC
= 2.7 V to 5.5 V
*5
, AV
ref
= 2.7 V to AV
CC
V
SS
= AV
SS
= 0 V, V
PP
= 12.0 ± 0.6 V, T
a
= –20°C to +75°C (regular specifications),
T
a
= –40°C to +85°C (wide-range specifications)
*5
,
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Programming time
*
1,
*
2
t
P
t
E
N
WEC
t
VS1
t
VS2
t
FRS
—
50
1000
μs
Erase time
*
1,
*
3
—
1
30
s
Number of writing/erasing count
—
—
100
Times
Verify setup time 1
*
1
4
—
—
μs
Verify setup time 2
*
1
2
—
—
μs
Flash memory read setup
time
*
4
50
—
—
μs
V
CC
≥
4.5 V
V
CC
< 4.5 V
100
—
—
Notes:
*
1 Set the times following the programming/erasing algorithm shown in section 19.
*
2 The programming time is the time during which a byte is programmed or the P bit in the
flash memory control register (FLMCR) is set. It does not include the program-verify
time.
*
3 The erase time is the time during which all 32-kbyte blocks are erased or the E bit in the
flash memory control register (FLMCR) is set . It does not include the prewrite time
before erasure or erase-verify time.
*
4 After power-on when using an external colck source, after return from standby mode, or
after switching the programming voltage (V
) from 12 V to V
CC
, make sure that this read
setup time has elapsed before reading flash memory.
When V
is released, the flash memory read setup time is defined as the period from
when the FV
PP
pin has reached V
CC
+ 2 V until flash memory can be read.
*
5 In the LH version, V
CC
= 3.0 V to 5.5 V, AV
CC
= 3.0 V to 5.5 V, AV
ref
= 3.0 V to AV
CC
.