參數(shù)資料
型號(hào)： HD1L3N
廠商： NEC Corp.
英文描述： on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
中文描述： 片上NPN硅外延電阻晶體管中速開(kāi)關(guān)
文件頁(yè)數(shù)： 3/6頁(yè)
文件大小： 112K
代理商： HD1L3N
Data Sheet D16182EJ2V0DS
3
HD1 SERIES
HD1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
200
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.1 A
0.2
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Input resistance
R
1
7
10
13
k
k
E-to-B resistance
R
2
7
10
13
**PW
≤
350
μ
s, duty cycle
≤
2 %
HD1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
200
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.8 A
0.5
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.29
4.7
6.11
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
HD1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
100
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.8 A
V
CE
= 5.0 V, I
C
= 100
μ
A
0.5
V
Low level input voltage
V
IL
**
0.3
V
Input resistance
R
1
154
220
286
E-to-B resistance
R
2
1.54
2.2
2.86
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
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