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參數(shù)資料
| 型號(hào)： | HD1A4M |
| 廠商： | NEC Corp. |
| 英文描述： | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| 中文描述： | 片上NPN硅外延電阻晶體管中速開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 112K |
| 代理商： | HD1A4M |
Data Sheet D16182EJ2V0DS
2
HD1 SERIES
HD1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
80
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
200
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.4 A
0.35
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Input resistance
R
1
0.7
1.0
1.3
k
k
E-to-B resistance
R
2
0.7
1.0
1.3
**PW
≤
350
μ
s, duty cycle
≤
2 %
HD1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
200
630
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
780
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
430
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.3 A
0.12
0.3
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.5
0.3
V
k
Input resistance
R
1
1.54
2.2
2.86
E-to-B resistance
R
2
7
10
13
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
HD1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
200
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.2 A
V
CE
= 5.0 V, I
C
= 100
μ
A
0.2
V
Low level input voltage
V
IL
**
0.3
V
Input resistance
R
1
3.29
4.7
6.11
k
E-to-B resistance
R
2
7
10
13
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
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