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參數(shù)資料
| 型號(hào)： | HD1A3M |
| 廠商： | NEC Corp. |
| 英文描述： | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| 中文描述： | 片上NPN硅外延電阻晶體管中速開關(guān) |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 112K |
| 代理商： | HD1A3M |
Data Sheet D16182EJ2V0DS
3
HD1 SERIES
HD1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
200
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.1 A
0.2
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Input resistance
R
1
7
10
13
k
k
E-to-B resistance
R
2
7
10
13
**PW
≤
350
μ
s, duty cycle
≤
2 %
HD1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
200
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.8 A
0.5
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.29
4.7
6.11
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
HD1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
100
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.8 A
V
CE
= 5.0 V, I
C
= 100
μ
A
0.5
V
Low level input voltage
V
IL
**
0.3
V
Input resistance
R
1
154
220
286
E-to-B resistance
R
2
1.54
2.2
2.86
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HD1A4A | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| HD1A4M | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| HD1F2Q | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| HD1F3P | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| HD1L2Q | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HD1A3M-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| HD1A4A | 制造商:NEC 制造商全稱:NEC 功能描述:on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| HD1A4A-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| HD1A4M | 制造商:NEC 制造商全稱:NEC 功能描述:on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| HD1A4M-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Tr. w/h resist,60V,1.0A,P-MINIMOLD3 |
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