參數(shù)資料
型號(hào): HD1
廠商: NEC Corp.
英文描述: on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
中文描述: 片上NPN硅外延電阻晶體管中速開(kāi)關(guān)
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 112K
代理商: HD1
Data Sheet D16182EJ2V0DS
4
HD1 SERIES
HD1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
200
630
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
780
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
430
Collector saturation voltage
V
CE(sat)
**
I
C
= 0.7 A, I
B
= 7 mA
0.25
0.4
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.5
0.3
V
Input resistance
R
1
k
E-to-B resistance
R
2
7
10
13
**PW
350
μ
s, duty cycle
2 %
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