參數(shù)資料
型號: HCTS30MS
廠商: Intersil Corporation
英文描述: Radiation Hardened 8-Input NAND Gate
中文描述: 輻射加固8輸入與非門
文件頁數(shù): 9/10頁
文件大?。?/td> 134K
代理商: HCTS30MS
448
HCTS30MS
Die Characteristics
DIE DIMENSIONS:
87 x 88 mils
METALLIZATION:
Type: SiAl
Metal Thickness: 11k
±
1k
GLASSIVATION:
Type: SiO
2
Thickness: 13k
±
2.6k
WORST CASE CURRENT DENSITY:
<2.0 x 10
5
A/cm
2
BOND PAD SIZE:
100
μ
m x 100
μ
m
4 mils x 4 mils
Metallization Mask Layout
HCTS30MS
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCTS30 is TA14428A.
A
(1)
VCC
(14)
NC
(13)
B (2)
C (3)
D (4)
E (5)
(6)
F
(7)
GND
(8)
Y
(9) NC
(10) NC
(11) G
(12) H
Spec Number
518639
相關(guān)PDF資料
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