參數(shù)資料
型號(hào): HCT10
廠商: System Logic Semiconductor Co., Ltd.
英文描述: Triple 3-Input NAND Gate(High-Performance Silicon-Gate CMOS)
中文描述: 三3輸入與非門(高性能硅柵CMOS)
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 33K
代理商: HCT10
SL74HCT10
S ystem Logic
Semiconductor
SLS
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
25
°
C
to
-55
°
C
85
°
C
125
°
C
Unit
V
IH
Minimum High-Level
Input Voltage
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
20
μ
A
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
V
IL
Maximum Low -Level
Input Voltage
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
20
μ
A
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
V
OH
Minimum High-Level
Output Voltage
V
IN
=V
IH
or V
IL
I
OUT
20
μ
A
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
V
IN
=V
IH
or V
IL
I
OUT
4.0 mA
4.5
3.98
3.84
3.7
V
OL
Maximum Low-Level
Output Voltage
V
IN
=V
IH
I
OUT
20
μ
A
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
=V
IH
I
OUT
4.0 mA
4.5
0.26
0.33
0.4
I
IN
Maximum Input
Leakage Current
V
IN
=V
CC
or GND
5.5
±
0.1
±
1.0
±
1.0
μ
A
I
CC
Maximum Quiescent
Supply Current
per Package)
V
IN
=V
CC
or GND
I
OUT
=0
μ
A
5.5
2.0
20
40
μ
A
I
CC
Additional Quiescent
Supply Current
V
IN
= 2.4 V, Any One Input
V
IN
=V
CC
or GND, Other
Inputs
-55
°
C
25
°
C to
125
°
C
mA
I
OUT
=0
μ
A
5.5
2.9
2.4
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