參數(shù)資料
型號: HCPL-3100
英文描述: Power MOSFET/IGBT Gate Drive Optocouplers(功率 MOSFET/IGBT門驅動耦合器)
中文描述: 功率MOSFET / IGBT柵極驅動光電耦合器(功率MOSFET的/ IGBT的門驅動耦合器)
文件頁數(shù): 6/12頁
文件大?。?/td> 257K
代理商: HCPL-3100
6
Switching Specifications
(T
A
= 25
°
C)
Parameter
Sym.
Device
Min.
Typ.
Max. Units
Test Conditions
Fig.
Note
Propagation
Delay Time to
High Output
Level
t
PLH
HCPL-3100
-
1
2
μ
s
I
F
= 10 mA
V
CC
= 24 V,
V
O1
= 24 V,
R
G
= 47
,
C
G
= 3000 pF
9,
25,
26,
27
2, 6
HCPL-3101
-
0.3
0.5
μ
s
I
F
= 5 mA
Propagation
Delay Time to
Low Output
Level
t
PHL
HCPL-3100
-
1
2
μ
s
I
F
= 10 mA
HCPL-3101
-
0.3
0.5
μ
s
I
F
= 5 mA
Rise Time
t
r
HCPL-3100
-
0.2
0.5
μ
s
I
F
= 10 mA
I
F
= 5 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 10 mA
HCPL-3101
Fall Time
t
f
HCPL-3100
-
0.2
0.5
μ
s
HCPL-3101
Output High
Level Common
Mode Transient
Immunity
|CM
H
|
HCPL-3100
1500
5000
-
V/
μ
s
V
CM
= 600 V
(peak),
V
CC
= 24 V
V
O1
= 24 V
V
02H
=
V
02L
= 2.0 V
10
2
HCPL-3101
I
F
= 5mA
Output Low
Level Common
Mode Transient
Immunity
|CM
L
|
1500
5000
-
V/
μ
s
I
F
= 0 mA
Notes:
1. Derate absolute maximum ratings with ambient temperatures as shown in Figures 11 and 12.
2. A bypass capacitor of 0.01
μ
F or more is needed near the device between V
CC
and GND when measuring output and transfer
characteristics.
3. I
FLH
represents the forward current when the output goes from low to high.
4. Device considered a two terminal device; pins 1-4 are shorted together and pins 5-8 are shorted together.
5. For devices with minimum V
ISO
specified at 5000 V rms, in accordance with UL 1577, each optocoupler is proof-tested by applying an
insulation test voltage
6000 V rms for one second (leakage current detection limit, I
I-O
200
μ
A).
6. The t
PLH
and t
PHL
propagation delays are measured from the 50% level of the input pulse to the 50% level of the output pulse.
7. R
2
limits the Q1 and Q2 peak currents. For more applications and circuit design information see Application Note “Power Transistor
Gate/Base Drive Optocouplers.”
Packaging Characteristics
Input-Output Momentary
Withstand Voltage*
Resistance (Input-Output)
Parameter
Sym.
V
ISO
Min.
5000
Typ.
Max.
Units
V rms
RH = 40% to 60%
t = 1 min, T
A
= 25
°
C
V
I-O
= 500 V, T
A
= 25
°
C
RH = 40% to 60%
f = 1 MHz
Test Conditions
Fig.
Note
4, 5
R
I-O
5x10
10
10
11
4
Capacitance (Input-Output)
C
I-O
1.2
pF
4
*The Input-Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input-output
continuous voltage rating. For the continuous voltage rating refer to the VDE 0884 Insulation Characteristics Table (if applicable), your
equipment level safety specification, or Agilent Application Note 1074, “Optocoupler Input-Output Endurance Voltage.”
相關PDF資料
PDF描述
HCPL-3101 Power MOSFET/IGBT Gate Drive Optocouplers(功率 MOSFET/IGBT門驅動耦合器)
HCPL-314J 0.4 Amp Output Current IGBT Gate Drive Optocoupler(0.4 Amp 輸出電流 IGBT門驅動耦合器)
HCPL-3150300 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL3150 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-3150 Single Channel 0.5 Amp Output Current IGBT Gate Drive Optocoupler(單通道 0.5 Amp輸出電流 IGBT門驅動耦合器)
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