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參數(shù)資料
| 型號： | HCMOS |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V |
| 中文描述： | HCMOS家庭特征 |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 87K |
| 代理商： | HCMOS |
March 1988
6
Philips Semiconductors
HCMOS family characteristics
FAMILY SPECIFICATIONS
Note
1.
The additional quiescent supply current per input is determined by the
I
CC
unit load, which has to be multiplied by
the unit load coefficient as given in the individual data sheets. For dual supply systems the theoretical worst-case
(V
I
= 2.4 V; V
CC
= 5.5 V) specification is:
I
CC
= 0.65 mA (typical) and 1.8 mA (maximum) across temperature.
I
CC
additional quiescent
supply current per
input pin for unit load
coefficient is 1
(note 1)
100
360
450
490
μ
A
4.5
to
5.5
V
CC
2.1 V
other inputs at
V
CC
or GND;
I
O
= 0
SYMBOL PARAMETER
T
amb
(
°
C)
UNIT
TEST CONDITIONS
74HCT
V
CC
(V)
V
I
OTHER
+
25
40 to
+
85
40 to
+
125
min.
typ.
max. min. max. min.
max.
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