參數(shù)資料
型號: HCF4006BM1
廠商: 意法半導(dǎo)體
元件分類: 通用總線功能
英文描述: 18-STAGE STATIC SHIFT REGISTER
中文描述: 18 -階段靜態(tài)移位寄存器
文件頁數(shù): 2/11頁
文件大?。?/td> 260K
代理商: HCF4006BM1
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
*
Parameter
Value
Unit
V
V
V
mA
mW
Supply Voltage :
HCC
Types
HCF
Types
– 0.5 to + 20
– 0.5 to + 18
– 0.5 to V
DD
+ 0.5
±
10
200
V
i
I
I
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
op
= Full Package-temperature Range
Operating Temperature :
HCC
Types
P
tot
100
mW
°
C
°
C
°
C
T
op
HCF
Types
– 55 to + 125
– 40 to + 85
– 65 to + 150
T
stg
Storage Temperature
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
Parameter
Value
3 to 18
3 to 15
0 to V
DD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°
C
°
C
Supply Voltage :
HCC
Types
HCF
Types
V
I
Input Voltage
Operating Temperature :
HCC
Types
T
op
HCF
Types
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
HCC/HCF4006B
2/11
相關(guān)PDF資料
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HCC4006BF MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V
HCF4006BC1 18-STAGE STATIC SHIFT REGISTER
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