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參數(shù)資料
| 型號： | HCF4001M013TR |
| 廠商： | 意法半導體 |
| 英文描述： | RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160 |
| 中文描述： | 四2輸入或非門 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 110K |
| 代理商： | HCF4001M013TR |
HCF4001B
4/8
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200K
R
T
= Z
OUT
of pulse generator (typically 50
)
WAVEFORM: PROPAGATION DELAY TIMES
(f=1MHz; 50% duty cycle)
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