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參數(shù)資料
| 型號： | HCC4023B |
| 廠商： | 意法半導體 |
| 英文描述： | NAND Gate(與非門) |
| 中文描述： | 與非門（與非門） |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 287K |
| 代理商： | HCC4023B |
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
*
Parameter
Value
Unit
V
V
V
mA
mW
Supply Voltage :
HCC
Types
HCF
Types
– 0.5 to + 20
– 0.5 to + 18
– 0.5 to V
DD
+ 0.5
±
10
200
V
i
I
I
P
tot
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
op
= Full Package-temperature Range
Operating Temperature :
HCC
Types
100
mW
°
C
°
C
°
C
T
op
HCF
Types
– 55 to + 125
– 40 to + 85
– 65 to + 150
T
stg
Storage Temperature
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
Parameter
Value
3 to 18
3 to 15
0 to V
DD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°
C
°
C
Supply Voltage :
HCC
Types
HCF
Types
V
I
T
op
Input Voltage
Operating Temperature :
HCC
Types
HCF
Types
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functionaloperation of thedeviceatthese orany otherconditions above thoseindicatedintheoperationalsections of thisspecificationisnotimplied.
Exposure to absolute maximum rating conditions forexternal periodsmay affect device reliability.
* Allvoltage values arereferred to V
SS
pin voltage.
HCC/HFC4011B/12B/23B
2/12
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