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參數資料
| 型號： | HCC40107BF |
| 廠商： | 意法半導體 |
| 元件分類： | FIFO |
| 英文描述： | 8192 x 18 Synchronous FIFO Memory 80-LQFP 0 to 70 |
| 中文描述： | 雙2輸入與非緩沖/驅動器 |
| 文件頁數： | 4/14頁 |
| 文件大?。?/td> | 270K |
| 代理商： | HCC40107BF |
STATIC ELECTRICAL CHARACTERISTICS
(continued)
Test Conditions
V
O
(V)
Value
25
°
C
Typ. Max.
32
68
74
136
100
32
68
74
136
100
V
I
(V)
|I
O
|
(
μ
A)
V
DD
(V)
T
Low
*
Min. Max.
21
44
49
89
66
17
35.7
39.1
72.2
53.5
T
High
*
Min. Max.
12
25
28
51
38
12
22
27
51
37
Symbol
Parameter
Min.
16
30
37
68
50
13.6
25.5
31.4
57.8
42.5
Unit
I
OL
Output
Sink
Current
HCC
Types
5
5
0.4
1
0.5
1
0.5
0.4
1
0.5
1
0.5
5
5
mA
10
10
15
5
5
10
10
15
10
10
15
5
5
10
10
15
HCF
Types
I
OH
Output Drive
Current
Input
Leakage
Current
No Internal Pull-up Device
mA
I
IH
, I
IL
HCC
Types
HCF
Types
HCC
Types
HCF
Types
0/18
Any Input
18
±
0.1
±
10
–5
±
0.1
±
1
μ
A
0/15
15
±
0.3
±
10
–5
±
0.3
±
1
I
OH
,I
OL
***
3-State
Output
Leakage
Current
0/18
18
18
2
±
10
–4
2
20
μ
A
0/15
15
15
2
±
10
–4
2
20
C
I
C
O
Input Capacitance
Output
Capacitance
Any Input
5
7.5
pF
Any Output
30
pF
*
*
T
Low
= – 55
°
C for HCC device ; – 40
°
C for HCF device.
T
High
= + 125
°
C for HCC device ; + 85
°
C for HCF device.
The Noise Margin, full package temperature range, R
L
to V
DD
= 10k
: 1V min with V
DD
= 5V, 2V min with V
DD
= 10V, 2.5V min with VDD = 15V.
** Measured with external pull-up resistor, R
L
= 10k
to V
DD
.
*** Forced output disabled.
HCC/HCF40107B
4/14
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