參數(shù)資料
型號: HCC4008B
廠商: 意法半導(dǎo)體
英文描述: MOSFET; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):550mohm; Rds(on) Test Voltage, Vgs:10V; Mounting Type:Through Hole; Package/Case:TO-220; Power Dissipation, Pd:125W; Terminal Type:3 RoHS Compliant: Yes
中文描述: 4位全加器進(jìn)位輸出并聯(lián)
文件頁數(shù): 13/13頁
文件大?。?/td> 292K
代理商: HCC4008B
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunderany patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsinlife supportdevices orsystemswithoutexpress
written approvalof SGS-THOMSON Microelectonics.
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HCC/HCF4008B
13/13
相關(guān)PDF資料
PDF描述
HCC4008BF MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:4.5A; On-Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Mounting Type:Through Hole
HCF4008BC1 4-BIT FULL ADDER WITH PARALLEL CARRY OUTPUT
HCF4009UB Hex Buffer/Converters(六緩沖器/轉(zhuǎn)換器)
HCF40101BM1 COMPACT MC 10MBPS W/ INTERNAL PS UTP/FO-SC
HCC40101B T-NPN-SI GEN PURP AMP
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