參數(shù)資料
型號: HCC4006BF
廠商: 意法半導體
英文描述: MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V
中文描述: 18 -階段靜態(tài)移位寄存器
文件頁數(shù): 5/11頁
文件大?。?/td> 260K
代理商: HCC4006BF
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25
°
C, C
L
= 50pF, R
L
= 200k
,
typical temperature coefficient for all V
DD
values is 0.3%/
°
C, all input rise and fall times = 20ns)
Value
Typ.
200
100
80
100
50
40
100
45
30
15
15
15
50
25
20
5
12
16
Symbol
Parameter
Test Conditions
V
DD
(V)
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
Min.
Max.
Unit
t
PLH
, t
PHL
Propagation Delay Time
ns
t
THL
, t
TLH
Transition Time
ns
t
w
Clock Pulse Width
ns
t
r
, t
f
Clock Input Rise or Fall Time*
μ
s
t
setup
Data Setup Time
ns
f
max
Maximum Clock Input Frequency
MHz
* If more than unit is cascaded t
r
CL should be madeless thanor equal to the sum of the transition timeand the fixed propagation delay of the
outputof the drivingstage for the estimated capacitive load.
Minimum Output Low(sink) Current Charac-
teristics.
Typical Output Low (sink) Current Characteristics.
HCC/HCF4006B
5/11
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