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參數(shù)資料
| 型號： | HBD437T |
| 廠商： | HSMC CORP. |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補性的芯片功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 37K |
| 代理商： | HBD437T |
HI-SINCERITY
MICROELECTRONICS CORP.
HBD437T
COMPLEMENTARY SILICON POWER TRANSISTORS
Spec. No. : HT200201
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 1/3
HBD437T
HSMC Product Specification
Description
The HBD437T is silison epitaxial-base NPN power transistor in TO-126
plastic package, intented for use in medium power linear and switching
applications. The complementary PNP type is HBD438T.
Absolute Maximum Ratings
(Ta=25
°
C)
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICM
IB
Parametor
Value
45
45
5
4
7
1
25
1.5
-55 to 150
150
Unit
V
V
V
V
A
A
A
W
W
°
C
°
C
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current
Collector Peak Current (t
≤
10ms)
Base Current
Tc=25
°
C
Ta=25
°
C
PD
Total Dissipation at
Tstg
Tj
Storage Temperature
Max. Operating Junction Temperature
Thermal Data
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
5
83
°
C/W
°
C/W
Electrical Characteristics
(Ta=25
°
C, unless otherwise specified)
Symbol
ICBO
Parameter
Test Conditions
VCB=45V
Min.
-
Typ.
-
Max.
100
Unit
uA
Collector Cut-off Current (IE=0)
Collector Cut-off Current
(VBE=0)
Emitter Cut-off Current (IC=0)
Collector-Emitter Sustaining
Voltage (IB=0)
Collector-Emitter Saturation
Voltage
ICES
VCE=45V
-
-
100
uA
IEBO
VEB=5V
1
mA
*VCEO(sus)
IC=100mA
45
-
-
V
*VCE(sat)
IC=2A, IB=0.2A
-
0.4
0.6
V
IC=10mA,VCE=5V
IC=2A, VCE=1V
IC=10mA, VCE=5V
IC=0.5A, VCE=1V
IC=2A, VCE=1V
IC=0.25A, VCE=1V
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
-
-
0.58
-
130
140
-
-
-
V
V
*VBE
Base-Emitter Voltage
1.2
-
-
-
-
30
85
40
3
*hFE
DC Current Gain
fT
Transition Frequency
MHz
TO-126
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相關代理商/技術參數(shù) |
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|---|---|
| HBD438T | 制造商:HSMC 制造商全稱:HSMC 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
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