參數(shù)資料
型號: HBAT-540C
英文描述: High Performance Schottky Diode for Transient Suppression(應(yīng)用于瞬變抑制的高性能肖特基二極管)
中文描述: 高性能肖特基二極管瞬態(tài)抑制(應(yīng)用于瞬變抑制的高性能肖特基二極管)
文件頁數(shù): 4/8頁
文件大?。?/td> 66K
代理商: HBAT-540C
4
Package Dimensions
Outline SOT-23
t
C
W
F
E
EMBOSSMENT
P
2
10 PITCHES CUMULATIVE
TOLERANCE ON TAPE
±
0.2 MM (
±
0.008)
USER FEED
DIRECTION
P
0
D
0
COVER
TAPE
T
P
1
D
1
K
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
B
K
P
1
D
1
3.15
±
0.15
2.65
±
0.25
1.30
±
0.10
4.00
±
0.10
1.00 min.
0.124
±
0.006
0.104
±
0.010
0.051
±
0.004
0.157
±
0.004
0.04 min.
CAVITY
DIAMETER
PITCH
POSITION
D
0
P
0
E
1.55 + 0.10/-0
4.00
±
0.10
1.75
±
0.10
0.061 + 0.004/-0
0.157
±
0.004
0.069
±
0.004
PERFORATION
WIDTH
THICKNESS
W
t
8.00
±
0.2
0.30
±
0.05
0.315
±
0.008
0.012
±
0.002
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50
±
0.10
2.00
±
0.05
0.138
±
0.004
0.079
±
0.002
DISTANCE
BETWEEN
CENTERLINE
WIDTH
TAPE THICKNESS
C
T
5.40
±
0.25
0.064
±
0.01
0.205
±
0.010
0.003
±
0.0004
COVER TAPE
B
CENTER LINES
OF CAVITY
A
Tape Dimensions and Product Orientation
For Outline SOT-23
3
1
2
X X
PACKAGE
MARKING
CODE
SIDE VIEW
TOP VIEW
END VIEW
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.02 (0.040)
0.89 (0.035)
0.50 (0.024)
0.45 (0.018)
1.40 (0.055)
1.20 (0.047)
2.65 (0.104)
2.10 (0.083)
3.06 (0.120)
2.80 (0.110)
2.04 (0.080)
1.78 (0.070)
1.02 (0.041)
0.85 (0.033)
0.152 (0.006)
0.066 (0.003)
0.10 (0.004)
0.013 (0.0005)
0.69 (0.027)
0.45 (0.018)
0.54 (0.021)
0.37 (0.015)
相關(guān)PDF資料
PDF描述
HBFP-0405-BLK High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0405 High Performance Isolated Collector Silicon Bipolar Transistor (86K in pdf)
HBFP-0405-TR3 TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 12MA I(C) | SOT-343R
HBFP-0420 3V High Performance Transistor
HBFP-0420-TR3 TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 36MA I(C) | SOT-343R
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HBAT-540C-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Schottky Diode for Transient Suppression
HBAT-540C-BLKG 功能描述:肖特基二極管與整流器 430mA 825mW Series RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
HBAT-540C-BLKG 制造商:Avago Technologies 功能描述:Diode
HBAT-540C-TR1 功能描述:DIODE SCHOTTKY 30V 430MA SOT-323 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 二極管 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 二極管類型:PIN - 單 電壓 - 峰值反向(最大):50V 電流 - 最大:50mA 電容@ Vr, F:0.4pF @ 50V,1MHz 電阻@ Vr, F:4.5 歐姆 @ 10mA,100MHz 功率耗散(最大):100mW 封裝/外殼:SC-70,SOT-323 供應(yīng)商設(shè)備封裝:3-MCP 包裝:帶卷 (TR)
HBAT-540C-TR1G 功能描述:肖特基二極管與整流器 430mA 825mW Series RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel