參數(shù)資料
型號(hào)： HBAT-540B-TR2G
廠商： AGILENT TECHNOLOGIES INC
元件分類(lèi)： 參考電壓二極管
英文描述： UNIDIRECTIONAL, SILICON, TVS DIODE
封裝： LEAD FREE, SC-70, 3 PIN
文件頁(yè)數(shù)： 7/8頁(yè)
文件大?。?/td> 112K
代理商： HBAT-540B-TR2G
7
I
F
–
V
F
–
FORWARD VOLTAGE (V)
.01
10
1
.1
300
100
0
0.1
0.3
0.2
0.5
0.4
0.6
HSMS-270x
HBAT-540x
Figure 7. Forward Current vs.
Forward Voltage at 25
°
C.
Because the automatic, pick-and-
place equipment used to assemble
these products selects dice from
adjacent sites on the wafer, the
two diodes which go into the
HBAT-5402 or HBAT-540C (series
pair) are closely matched
—
without the added expense of
testing and binning.
Current Handling in Clipping/
Clamping Circuits
The purpose of a clipping/clamp-
ing diode is to handle high cur-
rents, protecting delicate circuits
downstream of the diode. Current
handling capacity is determined
by two sets of characteristics,
those of the chip or device itself
and those of the package into
which it is mounted.
current
limiting
pull-down
(or pull-up)
long cross-site cable
noisy data-spikes
Vs
0V
voltage limited to
Vs + Vd
0V
–
Vd
Figure 8. Two Schottky Diodes
Are Used for Clipping/Clamping in
a Circuit.
Consider the circuit shown in
Figure 8, in which two Schottky
diodes are used to protect a
circuit from noise spikes on a
stream of digital data. The ability
of the diodes to limit the voltage
spikes is related to their ability to
sink the associated current spikes.
The importance of current
handling capacity is shown in
Figure 9, where the forward
voltage generated by a forward
current is compared in two
diodes. The first is a conventional
Schottky diode of the type gener-
ally used in RF circuits, with an R
S
of 7.7
. The second is a Schottky
diode of identical characteristics,
save the R
S
of 1.0
. For the
conventional diode, the relatively
high value of R
S
causes the
voltage across the diode
’
s termi-
nals to rise as current increases.
The power dissipated in the diode
heats the junction, causing R
S
to
climb, giving rise to a runaway
thermal condition. In the second
diode with low R
S
, such heating
does not take place and the
voltage across the diode terminals
is maintained at a low limit even
at high values of current.
Maximum reliability is obtained in
a Schottky diode when the steady
state junction temperature is
maintained at or below 150
°
C,
although brief excursions to
higher junction temperatures can
be tolerated with no significant
impact upon mean-time-to-failure,
MTTF. In order to compute the
junction temperature, Equations
(1) and (3) below must be simulta-
neously solved.
I
F
= I
S
e
–
1
11600 (V
F
–
I
F
R
S
)
(1)
I
S
= I
0
e
T
J
2
n
1
TJ
1
298
–
4060
–
(2)
T
J
= V
F
I
F
θ
JC
+ T
A
(3)
where:
I
F
= forward current
I
S
= saturation current
V
F
= forward voltage
R
S
= series resistance
T
J
= junction temperature
I
O
= saturation current at 25
°
C
n = diode ideality factor
θ
JC
= thermal resistance from
junction to case (diode lead)
=
θ
package
+
θ
chip
T
A
= ambient (diode lead)
temperature
Equation (1) describes the for-
ward V-I curve of a Schottky
diode. Equation (2) provides the
value for the diode
’
s saturation
current, which value is plugged
into (1). Equation (3) gives the
value of junction temperature as a
function of power dissipated in
the diode and ambient (lead)
temperature.
0
0.1
0.2
0.3
0.5
0.4
V
F
–
I
F
–
FORWARD CURRENT (mA)
0
3
2
1
6
4
5
R
s
= 7.7
R
s
= 1.0
Figure 9. Comparison of Two
Diodes.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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HBAT-540C-BLK 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:High Performance Schottky Diode for Transient Suppression
HBAT-540C-BLKG 功能描述:肖特基二極管與整流器 430mA 825mW Series RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
HBAT-540C-BLKG 制造商:Avago Technologies 功能描述:Diode
HBAT-540C-TR1 功能描述:DIODE SCHOTTKY 30V 430MA SOT-323 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF 二極管 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 二極管類(lèi)型:PIN - 單 電壓 - 峰值反向(最大):50V 電流 - 最大:50mA 電容@ Vr, F:0.4pF @ 50V，1MHz 電阻@ Vr, F:4.5 歐姆 @ 10mA，100MHz 功率耗散（最大）:100mW 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:3-MCP 包裝:帶卷 (TR)
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