- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄364817 > HB56UW473EJN-5 x72 EDO Page Mode DRAM Module PDF資料下載
參數(shù)資料
| 型號： | HB56UW473EJN-5 |
| 英文描述： | x72 EDO Page Mode DRAM Module |
| 中文描述： | x72 EDO公司頁面模式內(nèi)存模塊 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 137K |
| 代理商： | HB56UW473EJN-5 |
HB56U232 Series
2,097,152-word
×
32-bit High Density Dynamic RAM Module
Description
The HB56U232 is a 2 M
×
32 dynamic RAM module, mounted 16 pieces of 4-Mbit DRAM (HM514405CS)
sealed in SOJ package.
An outline of the HB56U232 is 72-pin single in-line package. Therefore, the HB56U232 makes high density
mounting possible without surface mount technology. The HB56U232 provides common data inputs and
outputs. Decoupling capacitors are mounted beneath each SOJ on the module board.
The HB56U232 offers Extended Data Out (EDO) page mode as a high speed access mode.
Features
72-pin single in-line package
— Lead pitch: 1.27 mm
Single 5 V (
±
5%) supply
High speed
— Access time: t
RAC
= 60/70 ns (max)
Low power dissipation
— Active mode: 4.83/4.41 W (max)
— Standby mode: 168 mW (max)
EDO page mode capability
1,024 refresh cycles: 16 ms
2 variations of refresh
—
RAS
-only refresh
—
CAS
-before-
RAS
refresh
TTL compatible
This Material Copyrighted by Its Respective Manufacturer
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB56UW473EJN-5L | x72 EDO Page Mode DRAM Module |
| HB56UW473EJN-6 | x72 EDO Page Mode DRAM Module |
| HB56UW473EJN-6B | x72 EDO Page Mode DRAM Module |
| HB56UW473EJN-6L | x72 EDO Page Mode DRAM Module |
| HB56UW473EJN-7 | x72 EDO Page Mode DRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB56UW473EJN-5L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 EDO Page Mode DRAM Module |
| HB56UW473EJN-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 EDO Page Mode DRAM Module |
| HB56UW473EJN-6B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 EDO Page Mode DRAM Module |
| HB56UW473EJN-6L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 EDO Page Mode DRAM Module |
| HB56UW473EJN-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 EDO Page Mode DRAM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復。