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參數(shù)資料
| 型號： | HB54R1G9F2U-10B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 1GB Registered DDR SDRAM DIMM |
| 中文描述： | 128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 159K |
| 代理商： | HB54R1G9F2U-10B |
HB54R1G9F2U-A75B/B75B/10B
Data Sheet E0192H30 (Ver. 3.0)
12
DC Characteristics 1 (TA = 0 to 55°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACTV-PRE)
ICC0
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
3117
2928
2559
4107
3828
3459
1065
948
831
1857
1668
1479
1317
1128
939
2217
2028
1839
5367
5088
4809
5007
4728
4449
5007
4818
4359
525
516
507
mA
CKE
≥
VIH, tRC = min.
1, 2, 5
Operating current (ACTV-READ-
PRE)
ICC1
mA
CKE
≥
VIH, BL = 2,
CL = 3.5, tRC = min.
1, 2, 5
Idle power down standby current ICC2P
mA
CKE
≤
VIL
4
Idle standby current
ICC2N
mA
CKE
≥
VIH, /CS
≥
VIH
4
Active power down standby
current
ICC3P
mA
CKE
≤
VIL
3
Active standby current
ICC3N
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = max.
3
Operating current
(Burst read operation)
ICC4R
mA
CKE
≥
VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
Operating current
(Burst write operation)
ICC4W
mA
CKE
≥
VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
Auto refresh current
ICC5
mA
tRFC = min.,
Input
≤
VIL or
≥
VIH
Self refresh current
ICC6
mA
Input
≥
VCC
– 0.2V
Input
≤
0.2V.
Notes. 1. These ICC data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. The ICC data on this table are measured with regard to tCK = min. in general.
DC Characteristics 2 (TA = 0 to 55°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–10
10
μA
VCC
≥
VIN
≥
VSS
Output leakage current
ILO
–10
10
μA
VCC
≥
VOUT
≥
VSS
Output high voltage
VOH
VTT + 0.76
—
V
IOH (max.) = –15.2mA
Output low voltage
VOL
—
VTT – 0.76
V
IOL (min.) = 15.2mA
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| HB54R1G9F2U-A75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR SDRAM DIMM |
| HB54R1G9F2U-B75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR SDRAM DIMM |
| HB54R5128KN-10B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB DDR SDRAM SO DIMM |
| HB54R5128KN-A75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB DDR SDRAM SO DIMM |
| HB54R5128KN-B75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB DDR SDRAM SO DIMM |
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