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參數(shù)資料
| 型號： | HB54A5129F1-A75B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512MB Registered DDR SDRAM DIMM |
| 中文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | DUAL LEAD OUT, SOCKET TYPE, DIMM-184 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大小： | 165K |
| 代理商： | HB54A5129F1-A75B |
HB54A5129F1-A75B/B75B/10B
Data Sheet E0090H40 (Ver. 4.0)
12
DC Characteristics
1
(TA = 0 to 55°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACTV-PRE)
ICC0
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
2194
2096
1819
3184
2996
2719
718
656
595
1114
1016
919
844
746
649
1294
1196
1099
4444
4256
4069
4084
3896
3709
4084
3986
3619
448
440
433
mA
CKE
≥
VIH, tRC = min.
1, 2, 5
Operating current (ACTV-READ-
PRE)
ICC1
mA
CKE
≥
VIH, BL = 2,
CL = 3.5, tRC = min.
1, 2, 5
Idle power down standby current ICC2P
mA
CKE
≤
VIL
4
Idle standby current
ICC2N
mA
CKE
≥
VIH, /CS
≥
VIH
4
Active power down standby
current
ICC3P
mA
CKE
≤
VIL
3
Active standby current
ICC3N
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = max.
3
Operating current
(Burst read operation)
ICC4R
mA
CKE
≥
VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
Operating current
(Burst write operation)
ICC4W
mA
CKE
≥
VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
Auto refresh current
ICC5
mA
tRFC = min.,
Input
≤
VIL or
≥
VIH
Self refresh current
ICC6
mA
Input
≥
VCC
– 0.2V
Input
≤
0.2V.
Notes. 1. These ICC data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. The ICC data on this table are measured with regard to tCK = min. in general.
DC Characteristics
2 (TA = 0 to 55°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–10
10
μA
VCC
≥
VIN
≥
VSS
Output leakage current
ILO
–10
10
μA
VCC
≥
VOUT
≥
VSS
Output high voltage
VOH
VTT + 0.76
—
V
IOH (max.) = –15.2mA
Output low voltage
VOL
—
VTT – 0.76
V
IOL (min.) = 15.2mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HB54A5129F1-B75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR SDRAM DIMM |
| HB54A5129F1U | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR SDRAM DIMM |
| HB54A5129F1U-10B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR SDRAM DIMM |
| HB54A5129F1U-A75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR SDRAM DIMM |
| HB54A5129F1U-B75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR SDRAM DIMM |
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