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參數(shù)資料
| 型號： | HB54A2568KN-B75B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 256MB DDR SDRAM S.O.DIMM |
| 中文描述： | 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 |
| 封裝： | SODIMM-200 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大小： | 514K |
| 代理商： | HB54A2568KN-B75B |
HB54A2568KN-A75B/B75B/10B
Preliminary Data Sheet E0148H20 (Ver. 2.0)
12
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–1.0 to +4.6
V
1
Supply voltage relative to VSS
VCC, VCCQ
–1.0 to +4.6
V
1
Short circuit output current
IOUT
50
mA
Power dissipation
PT
8
W
Operating temperature
Topr
0 to +65
°C
Storage temperature
Tstg
–50 to +100
°C
Notes: 1. Respect to VSS.
DC Operating Conditions (TA = 0 to +65°C)
Parameter
Symbol
min.
Typ
max.
Unit
Notes
Supply voltage
VCC, VCCQ
2.3
2.5
2.7
V
1, 2
VSS
0
0
0
V
Input reference voltage
VREF
1.15
1.25
1.35
V
1
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
1
DC Input high voltage
VIH
VREF + 0.18
—
VCCQ + 0.3
V
1, 3
DC Input low voltage
VIL
–0.3
—
VREF – 0.18
V
1, 4
DC Input signal voltage
VIN (dc)
–0.3
—
VCCQ + 0.3
V
5
DC differential input voltage
VSWING (dc) 0.36
—
VCCQ + 0.6
V
6
Notes: 1. All parameters are referred to VSS, when measured.
2. VCCQ must be lower than or equal to VCC.
3. VIH is allowed to exceed VCC up to 4.6V for the period shorter than or equal to 5ns.
4. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
5. VIN (dc) specifies the allowable dc execution of each differential input.
6. VSWING (dc) specifies the input differential voltage required for switching.
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| HB54A2569F1 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
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| HB54A2569F1-B75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
| HB54A2569F1U | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
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